TIC216A, tic216b, tic216d, tic216m, tic216n, tic216s page 1 of 3 semiconductors description this device is a bidirectional tr iode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main te rminal 2 at either polarity. absolute maximum ratings value unit symbol ratings a b d m s n v drm repetitive peak off-state voltage (see note1) 100 200 400 600 700 800 v i t(rms) full-cycle rms on-state current at (or below) 70c case temperature (see note2) 6 a i tsm peak on-state surge current full-sine-wave (see note3) 60 a i tsm peak on-state surge current half-sine-wave (see note4) 70 a i gm peak gate current 1 a p gm peak gate power dissipation at (or below) 85c case temperature (pulse width 200 s) 2.2 w p g(av) average gate power dissipation at (or below) 85c case (see note5) 0.9 w t c operating case temperature range -40 to +110 c t stg storage temperature range -40 to +125 c t l lead temperature 1.6 mm from case for 10 seconds 230 c silicon bidirectional triode thyristor ? 6 a rms ? glass passivated wafer ? 100 v to 800 v off-state voltage ? max i gt of 5 ma (quadrants 1-3) ? sensitive gate triacs ? compliance to rohs
TIC216A, tic216b, tic216d, tic216m, tic216n, tic216s page 2 of 3 semiconductors notes: 1. these values apply bidirectionally for any value of resistance between the gate and main terminal 1. 2. this value applies for 50-hz full-sine-wave opera tion with resistive load. above 70c derate linearly to 110c case temperatur e at the rate of 150 ma/c. 3. this value applies for one 50-hz full-sine-wave when the device is operating at (or below) the rated value of on-state curren t. surge may be repeated after the de vice has returned to original thermal equilibrium. during the surge, gate control may be lost. 4. this value applies for one 50-hz half-sine-wave wh en the device is operating at (or below) the rated value of on-state curren t. surge may be repeated after the de vice has returned to original thermal equilibrium. during the surge, gate control may be lost. 5. this value applies for a maximum averaging time of 20 ms. thermal characteristics symbol ratings value unit r ? jc junction to case thermal resistance 2.5 r ? ja junction to free air thermal resistance 62.5 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i drm repetitive peak off- state current v d = rated v drm , , i g = 0, t c = 110c - - 2 ma v supply = +12 v?, r l = 10 ? , t p(g) = > 20 s - - 5 v supply = +12 v?, r l = 10 ? , t p(g) = > 20 s - - -5 v supply = -12 v?, r l = 10 ? , t p(g) = > 20 s - - -5 i gt gate trigger current v supply = -12 v?, r l = 10 ? , t p(g) = > 20 s - - 10 ma v supply = +12 v?, r l = 10 ? , t p(g) = > 20 s - - 2.2 v supply = +12 v?, r l = 10 ? , t p(g) = > 20 s - - -2.2 v supply = -12 v?, r l = 10 ? , t p(g) = > 20 s - - -2.2 v gt gate trigger voltage v supply = -12 v?, r l = 10 ? , t p(g) = > 20 s - - 3 v v supply = +12 v?, i g = 0, initiating i tm = 100 ma - - 30 i h holding current v supply = -12 v?, i g = 0, initiating i tm = -100 ma - - -30 ma v supply = +12 v? (seenote7) - 50 - i l latching current v supply = -12 v? (seenote7) - -20 - ma v tm peak on-state voltage i tm = 8.4 a, i g = 50 ma (see note6) - - 1.7 v dv/dt critical rate of rise of off-state voltage v drm = rated v drm , i g = 0 t c = 110c - 50 - dv/dt ? critical rise of communication voltage v drm = rated v drm , i trm = 8.4a t c = 70c 5 - - v/s ? all voltages are whit respect to main terminal 1.
TIC216A, tic216b, tic216d, tic216m, tic216n, tic216s page 3 of 3 semiconductors note 6: this parameters must be measured using pulse techniques, t w = 1 s, duty cycle 2 %, voltage-sensing contacts, separate from the courrent -carrying contacts are locat ed within 3.2mm (1/8 inch) from de device body. note 7: the triacs are triggered by a 15-v (open circuit amplitude) pulse supplied by a generator with the following characteristics : r g = 100 ? , tp(g) = 20 s, t r = 15ns, f = 1 khz. mechanical data case to-220 pin 1 : main terminal 1 pin 2 : main terminal 2 pin 3 : gate
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